DocumentCode
2705397
Title
63-75 GHz fT SiGe-base heterojunction bipolar technology
Author
Patton, G.L. ; Comfort, J.H. ; Meyerson, B.S. ; Crabbe, E.F. ; Scilla, G.J. ; de Fresart, E. ; Stork, J.M.C. ; Sun, Jack Y.-C ; Harame, D.L. ; Burghartz, Joachim
fYear
1990
fDate
4-7 June 1990
Firstpage
49
Lastpage
50
Abstract
Experimental results for maximum cut-off frequency (fT) values of 75 and 52 GHz were achieved for SiGe-base and Si-base bipolar transistors with intrinsic base sheet resistances in the 10-17 kΩ/square range. These results extend the speed of silicon bipolar devices into a regime previously reserved to GaAs and other compound semiconductor technologies. Excellent junction characteristics were also obtained for devices as large as 100000 μm2 and for current densities as high as 106 A/cm2. The performance levels obtained for the SiGe transistors, which contain less than 10% germanium in the base, represent almost a factor of two increase in the speed of a Si bipolar transistor. These results demonstrate the significant performance advantage offered by SiGe heterojunction technology
Keywords
Ge-Si alloys; heterojunction bipolar transistors; semiconductor materials; semiconductor technology; solid-state microwave devices; 63 to 75 GHz; EHF; Si bipolar transistor; SiGe base bipolar transistors; SiGe-base heterojunction bipolar technology; current densities; intrinsic base sheet resistances; junction characteristics; maximum cut-off frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1990. Digest of Technical Papers.1990 Symposium on
Conference_Location
Honolulu, Hawaii, USA
Type
conf
DOI
10.1109/VLSIT.1990.111002
Filename
5727462
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