• DocumentCode
    2707323
  • Title

    A 2.4 GHz fully integrated CMOS power amplifier using capacitive cross-coupling

  • Author

    Hong, JeeYoung ; Imanishi, Daisuke ; Okada, Kenichi ; Matsuzawa, Akira

  • Author_Institution
    Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan
  • fYear
    2010
  • fDate
    Aug. 28 2010-Sept. 3 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The paper presented a 2.4GHz fully integrated CMOS power amplifier using capacitive cross-coupling, fabricated in 0.18μm CMOS. With a 3.3-V supply voltage, PAEmax and PAE at 1 dB compression point are 34.3% and 26.8%. P1dB, Psat, and PG are 25.2dBm, 27.7dBm and 26.5dB, respectively. The advantages of the proposed capacitive-cross-coupled PA are the improvement of reverse isolation and the area saving.
  • Keywords
    CMOS analogue integrated circuits; electromagnetic coupling; power amplifiers; CMOS power amplifier; area saving; capacitive cross-coupling; frequency 2.4 GHz; reverse isolation; size 0.18 mum; voltage 3.3 V; CMOS integrated circuits; CMOS technology; Capacitance; Gain; Logic gates; Power amplifiers; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Wireless Information Technology and Systems (ICWITS), 2010 IEEE International Conference on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-7091-4
  • Type

    conf

  • DOI
    10.1109/ICWITS.2010.5612280
  • Filename
    5612280
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2707323