DocumentCode
2708681
Title
A scalable analytical model for the ESD N-well resistor
Author
Puvvada, Venugopal ; Srinivasan, Venkatesh ; Gupta, Vishal
Author_Institution
Texas Instrum. (India) Ltd., Bangalore, India
fYear
2000
fDate
26-28 Sept. 2000
Firstpage
437
Lastpage
445
Abstract
We have proposed a simple analytical model for the N-well resistor up to the turnover point in the I-V characteristic of the device. A simple and accurate method of extraction of the parameters used on which this model is based has also been proposed. Furthermore, the scalability of these parameters has also been studied. The model and its scalability have been verified with experimental data.
Keywords
electric current; electrostatic discharge; protection; resistors; semiconductor device models; ESD N-well resistor; ESD protection; N-well resistor; device I-V characteristic turnover point; model parameter extraction; model scalability; model verification; parameter scalability; scalable analytical model; Analytical models; Anodes; Circuit simulation; Data mining; Electrostatic discharge; Medical simulation; Resistors; Scalability; Semiconductor process modeling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000
Conference_Location
Anaheim, CA, USA
Print_ISBN
1-58537-018-5
Type
conf
DOI
10.1109/EOSESD.2000.890113
Filename
890113
Link To Document