DocumentCode
2710165
Title
A Phosphine Sub Atmospheric Delivery System (SADS) Applied to Low Pressure Chemical Vapor Deposition (LPCVD) of In-Situ Doped Polysilicon
Author
Bowser, Jerry ; Young, William ; Chen, Lei ; Luciani, Vincent
Author_Institution
Center for Nanoscale Sci. & Technol., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
fYear
2012
fDate
9-10 July 2012
Firstpage
1
Lastpage
1
Abstract
A phosphine SADS has been fitted to a conventional LPCVD furnace system. Through careful design and implementation, we have demonstrated an inherently safe system with significantly lower infrastructure requirements and costs that meet all semiconductor industry safety requirements.
Keywords
chemical vapour deposition; elemental semiconductors; furnaces; semiconductor thin films; silicon; LPCVD furnace system; Si; in-situ doped polysilicon; low pressure chemical vapor deposition; phosphine SADS; phosphine sub atmospheric delivery system; semiconductor industry safety requirements; Chemical vapor deposition; Electronics industry; Films; Fluid flow; Furnaces; Nanoscale devices; Safety;
fLanguage
English
Publisher
ieee
Conference_Titel
University/Government/Industry, Micro/Nano Symposium (UGIM), 2012 19th Biennial
Conference_Location
Berkeley, CA
ISSN
0749-6877
Print_ISBN
978-1-4577-1751-2
Electronic_ISBN
0749-6877
Type
conf
DOI
10.1109/UGIM.2012.6247086
Filename
6247086
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