• DocumentCode
    271038
  • Title

    Pitch scaling of ultrafast, optically-triggered silicon field emitter arrays

  • Author

    Swanwick, M.E. ; Dong, Chen D. ; Keathley, P.D. ; Fallahi, Afshin ; Kartner, Franz X. ; Velasquez-García, Luis Fernando

  • Author_Institution
    Microsyst. Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA, USA
  • fYear
    2014
  • fDate
    6-10 July 2014
  • Firstpage
    69
  • Lastpage
    70
  • Abstract
    Ultrafast, optically-triggered field emitter arrays are an exciting new area of research with potential application in ultrafast imaging and in coherent x-ray sources based on inverse Compton scattering. The fabrication and preliminary experimental results of pitch scaling on emitter arrays using n-type silicon wafers and scalable CMOS processing is studied to better understand the effect of tip to tip field interaction, space charge and fabrication limitations.
  • Keywords
    CMOS integrated circuits; Compton effect; field emitter arrays; high-speed optical techniques; scaling circuits; silicon; coherent X-ray sources; fabrication limitations; field interaction; inverse Compton scattering; n-type silicon wafers; pitch scaling; scalable CMOS processing; space charge; ultrafast imaging; ultrafast optically-triggered silicon field emitter arrays; Cathodes; Optical device fabrication; Optical imaging; Optical scattering; Silicon; Space charge; Stimulated emission; field emission; multiplexed field emisison cathodes; optical field emission; ultrafast; uniform arrays;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference (IVNC), 2014 27th International
  • Conference_Location
    Engelberg
  • Print_ISBN
    978-1-4799-5306-6
  • Type

    conf

  • DOI
    10.1109/IVNC.2014.6894763
  • Filename
    6894763
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=271038