Structure and properties of rapid thermal annealed (RTA) BaTiO3 thin films on silicon

BaTiO₃ thin films were rf-sputtered on Si(100) and platinized Si(100) substrates under controlled substrate temperature and ambient. Dense, single phase films with strongly preferred orientation in the film thickness range of 0.7 μm, and uniform grain sizes up to 0.25 μm were obtained under rapid thermal annealing (RTA) heat treatment in a refractory infrared furnace. Electrical measurements including dielectric, pyroelectric and photoelectric response characteristics were carried out. Flat capacitance response (ε_r=60) and low loss factor (D≈1-2%) was obtained over a wide frequency range of 100-100 kHz for an optimal specimen. Pyroelectric coefficients determined for the films were in the range of 10^-9 C/cm² K, but significantly strong photovoltages of >900 V/cm, on a 0.6 cm² surface area, were generated with incandescent illumination