DocumentCode
2711060
Title
Continuous-wave terahertz generation using a vertically integrated horn antenna photomixer
Author
Peytavit, E. ; Lampin, J.F. ; Hindle, F. ; Yang, C. ; Mouret, G.
Author_Institution
IEMN, Univ. Lille1, Villeneuve-d´´Ascq, France
fYear
2010
fDate
5-10 Sept. 2010
Firstpage
1
Lastpage
1
Abstract
A transverse Electromagnetic Horn Antenna is monolithically integrated with a low-temperature-grown GaAs vertical photoconductor on a silicon substrate forming a vertically integrated photomixer. Continuous-wave terahertz radiation is generated at frequencies up to 3.5 THz with a power level reaching 20 nW around 3 THz.
Keywords
III-V semiconductors; elemental semiconductors; gallium arsenide; horn antennas; photoconducting devices; silicon; terahertz wave generation; GaAs; Si; continuous-wave terahertz generation; low-temperature-grown vertical photoconductor; power 20 nW; silicon substrate; transverse electromagnetic horn antenna; vertically integrated horn antenna photomixer; Electrodes; Gallium arsenide; Horn antennas; Integrated circuit modeling; Photoconducting materials; Photodetectors;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location
Rome
Print_ISBN
978-1-4244-6655-9
Type
conf
DOI
10.1109/ICIMW.2010.5612498
Filename
5612498
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