Compact On-Chip Three-Dimensional Electromagnetic Bandgap Structure

Author

Leung, Lydia L W ; Chen, Kevin J.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon

fYear

2006

fDate

11-16 June 2006

Firstpage

594

Lastpage

597

Abstract

In this paper, we present a compact 3-dimensional on-chip electromagnetic bandgap (EBG) structure with a unit size of 200mum on 400mum-thick silicon making use of a recently developed high aspect-ratio through-wafer vias. The on-chip EBG structure consists of parallel plane capacitance between two overlapped metal plane with PECVD silicon nitride as dielectric and 50mum Cu-filled through-wafer vias as inductors. The novel 3-D on-chip structure exhibits a crosstalk suppression of 30 dB at 8 GHz with a 2-GHz bandgap

Keywords

capacitance; inductors; integrated circuit interconnections; photonic band gap; 2 GHz; 200 micron; 3D electromagnetic bandgap structure; 400 micron; 50 micron; 8 GHz; Cu; PECVD silicon nitride; SiN; compact electromagnetic bandgap structure; copper-filled through-wafer vias; inductors; on-chip EBG structure; on-chip electromagnetic bandgap structure; overlapped metal plane; parallel plane capacitance; through-wafer interconnects; Antenna arrays; Capacitance; Crosstalk; Dielectric substrates; Frequency; Inductance; Metamaterials; Periodic structures; Silicon; Sputtering; Electromagnetic Bandgap Structure; silicon substrate; through-wafer interconnects; via holes;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2006. IEEE MTT-S International

Conference_Location

San Francisco, CA

ISSN

0149-645X

Print_ISBN

0-7803-9541-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2006.249664

Filename

4014970