DocumentCode
2711149
Title
Characterization of semiconductor materials as terahertz emitters under the effect of in-plane magnetic field
Author
Radhanpura, K. ; Lewis, R.A.
Author_Institution
Inst. for Supercond. & Electron. Mater., Univ. of Wollongong, Wollongong, NSW, Australia
fYear
2010
fDate
5-10 Sept. 2010
Firstpage
1
Lastpage
2
Abstract
The effect of magnetic field on emitted terahertz radiation is useful for determination of the mechanism involved in THz generation. Semiconductor materials, which are potential sources of terahertz radiation, have been analyzed under the influence of in-plane magnetic field.
Keywords
microwave materials; terahertz wave generation; terahertz wave spectra; inplane magnetic field; semiconductor material characterization; terahertz emitter; terahertz generation; Crystals; Delay effects; Indium phosphide; Magnetic domains; Magnetic field measurement; Magnetic fields; Optical surface waves;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location
Rome
Print_ISBN
978-1-4244-6655-9
Type
conf
DOI
10.1109/ICIMW.2010.5612502
Filename
5612502
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