• DocumentCode
    2711149
  • Title

    Characterization of semiconductor materials as terahertz emitters under the effect of in-plane magnetic field

  • Author

    Radhanpura, K. ; Lewis, R.A.

  • Author_Institution
    Inst. for Supercond. & Electron. Mater., Univ. of Wollongong, Wollongong, NSW, Australia
  • fYear
    2010
  • fDate
    5-10 Sept. 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The effect of magnetic field on emitted terahertz radiation is useful for determination of the mechanism involved in THz generation. Semiconductor materials, which are potential sources of terahertz radiation, have been analyzed under the influence of in-plane magnetic field.
  • Keywords
    microwave materials; terahertz wave generation; terahertz wave spectra; inplane magnetic field; semiconductor material characterization; terahertz emitter; terahertz generation; Crystals; Delay effects; Indium phosphide; Magnetic domains; Magnetic field measurement; Magnetic fields; Optical surface waves;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
  • Conference_Location
    Rome
  • Print_ISBN
    978-1-4244-6655-9
  • Type

    conf

  • DOI
    10.1109/ICIMW.2010.5612502
  • Filename
    5612502