Epitaxially grown 1.06 μm and eye safe microchip lasers

Author

Kopczynski, Krzystof ; Sarnecki, Jerzy ; Mlynczak, Jaroslaw ; Mierczyk, Zygmunt ; Skwarcz, Jerzy

Author_Institution

Inst. of Optoelectron., Mil. Univ. of Technol., Warsaw, Poland

Volume

1

fYear

2005

fDate

12-17 Sept. 2005

Firstpage

154

Abstract

Most of works on passively Q-switched microchip lasers emitting at 1064 nm have been done with neodymium-doped YAG crystals as gain material and Cr⁴⁺:YAG as saturable absorber. The bulk Cr⁴⁺:GGG Czochralski grown passive Q-switches were also investigated. We have used a technique of liquid phase epitaxy (LPE) to grow Cr⁴⁺:YAG, Cr⁴⁺:GGG and Co²⁺:YAG thin films of saturable absorber. X-ray diffraction analysis, optical transmission spectra measurements and passive Q-switching experiments were performed to characterize the obtained layers. Absorption saturation measurements of Cr⁴⁺:YAG, Cr⁴⁺:GGG and Co²⁺:YAG layers were carried out at 1.06 μm and 1.54 μm, respectively.

Keywords

Q-switching; X-ray diffraction; chromium; cobalt; crystal growth from melt; crystal structure; gadolinium compounds; liquid phase epitaxial growth; microchip lasers; neodymium; optical saturable absorption; 1.06 micron; 1.54 micron; 1064 nm; Czochralski grown Q-switch; GdGG:Cr⁴⁺; GdGa5O12:Cr; X-ray diffraction analysis; YAG:Co²⁺; YAG:Cr⁴⁺; YAG:Nd; YAl5O12:Co; YAl5O12:Cr; YAl5O12:Nd; epitaxially grown microchip laser; eye safe microchip laser; gain material; liquid phase epitaxy; neodymium-doped YAG crystal; optical transmission spectra; passively Q-switched microchip laser; saturable absorber thin film; Chromium; Crystalline materials; Crystals; Epitaxial growth; Microchip lasers; Optical diffraction; Optical materials; Performance analysis; Transistors; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Optoelectronics and Lasers, 2005. Proceedings of CAOL 2005. Second International Conference on

Print_ISBN

0-7803-9130-6

Type

conf

DOI

10.1109/CAOL.2005.1553845

Filename

1553845