• DocumentCode
    2711696
  • Title

    4-Watt Ka-Band AlGaN/GaN Power Amplifier MMIC

  • Author

    Darwish, A.M. ; Boutros, K. ; Luo, B. ; Huebschman, B. ; Viveiros, E. ; Hung, H.A.

  • Author_Institution
    Army Res. Lab., Adelphi, MD
  • fYear
    2006
  • fDate
    11-16 June 2006
  • Firstpage
    730
  • Lastpage
    733
  • Abstract
    A broadband Ka-band AlGaN/GaN on SiC HEMT power amplifier MMIC was developed for millimeter-wave antenna applications. The output stage is composed of a 1.2-mm-wide device with 0.18 mum gate length. The two-stage 50-ohm matched MMIC produces 13plusmn1 dB of gain from 26 GHz to 36 GHz. At 35 GHz, the measured CW saturated output power was 4 W, indicating a power density of 3.3 W/mm. The power added efficiency was 23%. Across the band, the measured CW output power was > 2 W. While individual (or partially matched single stage) devices have been demonstrated with good output power, to the best of our knowledge, this is the first report of a 10 GHz-bandwidth Ka-band GaN MMIC with high output power, gain, and return loss
  • Keywords
    HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; carbon compounds; gallium compounds; integrated circuit design; millimetre wave integrated circuits; millimetre wave power amplifiers; nitrogen; silicon compounds; wide band gap semiconductors; 0.18 micron; 10 GHz; 26 to 36 GHz; 4 W; AlGaN-GaN; HEMT power amplifier; Ka-band; MMIC power amplifier; millimeter-wave antenna applications; Aluminum gallium nitride; Broadband amplifiers; Broadband antennas; Gallium nitride; HEMTs; MMICs; Power amplifiers; Power generation; Power measurement; Silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2006. IEEE MTT-S International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-9541-7
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2006.249737
  • Filename
    4015008