DocumentCode
2712490
Title
New TDDB lifetime model for AC inverter-like stress in advance FinFET structure
Author
Chen, I.K. ; Chen, C.L. ; Lee, Y.-H. ; Lu, R. ; Lee, Y.W. ; Hsu, H.H. ; Tseng, Y.W. ; Lin, Y.W. ; Shih, J.R.
Author_Institution
Technol. Quality & Reliability Div., Taiwan Semicond. Manuf. Co., Ltd., Hsinchu, Taiwan
fYear
2015
fDate
19-23 April 2015
Abstract
A new TDDB lifetime model is proposed to predict lifetime for AC inverter-like stress in FinFET device. The AC lifetime is governing by four mechanisms, including voltage switching, electron detrapping, HCI and hole injection. Among them, voltage switching and electron detrapping improve TDDB lifetime; while HCI and hole injection degrade the lifetime.
Keywords
MOSFET; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; AC inverter-like stress; AC lifetime prediction; FinFET device; HCI; TDDB lifetime model; advance FinFET structure; electron detrapping; hole injection; voltage switching; Charge carrier processes; Human computer interaction; Logic gates; MOS devices; Stress; Switches; Transient analysis; AC inverter-like; HCI; electron detrapping; hole injection; transient duty ratio (TDR); voltage switching;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2015 IEEE International
Conference_Location
Monterey, CA
Type
conf
DOI
10.1109/IRPS.2015.7112741
Filename
7112741
Link To Document