Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing

Author

Hongpinyo, V. ; Ding, Y.H. ; Dimas, C.E. ; Wang, Y. ; Ooi, B.S. ; Qiu, W. ; Goddard, L.L. ; Behymer, E.M. ; Cole, G.D. ; Bond, T.C.

Author_Institution

Electr. & Comput. Eng. Dept., Lehigh Univ., Bethlehem, PA

fYear

2008

fDate

8-11 Dec. 2008

Firstpage

1

Lastpage

3

Abstract

The authors investigate the effect of intermixing in shallow InGaAs/GaAs quantum well structure using impurity free induced disordering (IFVD) technique. The degradation of the photoluminescence (PL) signal is due to the severe loss of As from the material during high temperature annealing at above intermixing activation energy. The recovery of the PL signal from the intermixed InGaAs/GaAs quantum-well has been found to be achieved by applying a cycle-annealing at 800degC which is below activation temperature.

Keywords

III-V semiconductors; annealing; gallium arsenide; high-temperature effects; indium compounds; photoluminescence; semiconductor quantum wells; IFVD; InGaAs-GaAs; high temperature annealing; impurity free induced disordering technique; intermixing activation energy; multiple cycle annealing; photoluminescence signal degradation; quantum well intermixing method; temperature 800 degC; Annealing; Degradation; Gallium arsenide; Impurities; Indium gallium arsenide; Optical films; Optical materials; Photoluminescence; Plasma temperature; Quantum computing;

fLanguage

English

Publisher

ieee

Conference_Titel

PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE

Conference_Location

Singapore

Print_ISBN

978-1-4244-3901-0

Electronic_ISBN

978-1-4244-2906-6

Type

conf

DOI

10.1109/IPGC.2008.4781312

Filename

4781312