Two-dimensional Photonic Crystal Patterns for Vertical Light Extraction Enhancement from Ultra-thin Amorphous Si/Si3N4 Multilayer stack

Author

Ren, Fang-Fang ; Yu, M.B. ; Ye, J.D. ; Chen, Q. ; Tan, S.T. ; Lo, G.Q. ; Kwong, D.L.

Author_Institution

Inst. of Microelectron., Agency for Sci., Technol. & Res., Singapore

fYear

2008

fDate

8-11 Dec. 2008

Firstpage

1

Lastpage

3

Abstract

We integrated two-dimensional photonic crystal patterns with triangular lattice of air holes in the amorphous Si/Si₃N₄ multilayer stack to compensate for the poor internal brightness. The significant light extraction enhancement can be observed in the third direction, implying the spontaneous emission band strongly coupling with the resonant radiation band or leaky conduction band modes of the photonic crystal slabs at Gamma point in the photonic band structures.

Keywords

amorphous semiconductors; brightness; conduction bands; elemental semiconductors; integrated optics; multilayers; photonic band gap; photonic crystals; semiconductor thin films; semiconductor-insulator boundaries; silicon; silicon compounds; slabs; spontaneous emission; Si-Si₃N₄; leaky conduction band modes; photonic band structures; photonic crystal slabs; resonant radiation band modes; spontaneous emission band; triangular lattice; two-dimensional photonic crystal patterns; ultrathin amorphous multilayer stack; vertical light extraction enhancement; Amorphous materials; Brightness; Fabrication; Lattices; Nonhomogeneous media; Optical coupling; Photonic crystals; Quantum well devices; Resonance; Slabs;

fLanguage

English

Publisher

ieee

Conference_Titel

PhotonicsGlobal@Singapore, 2008. IPGC 2008. IEEE

Conference_Location

Singapore

Print_ISBN

978-1-4244-3901-0

Electronic_ISBN

978-1-4244-2906-6

Type

conf

DOI

10.1109/IPGC.2008.4781342

Filename

4781342