DocumentCode
2713119
Title
Measurements of THz emission from nanometric-size transistors
Author
Nouvel, P. ; Torres, J. ; Marinchio, H. ; Laurent, T. ; Blin, S. ; Chusseau, L. ; Palerm, C. ; Varani, L. ; Shiktorov, P. ; Starikov, E. ; Gruzhinskis, V. ; Teppe, F. ; Coquillat, D.
Author_Institution
Inst. d´´Electron. du Sud, Univ. Montpellier 2, Montpellier, France
fYear
2010
fDate
5-10 Sept. 2010
Firstpage
1
Lastpage
2
Abstract
Measurements of terahertz resonant emission due to the excitation of plasma waves by an optical beating inside AlGaAs/InGaAs/InP high electron mobility transistors are reported at 300 K and 200 K.
Keywords
III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; plasma waves; terahertz waves; AlGaAs; InGaAs; InP; THz emission measurements; high electron mobility transistors; nanometric-size transistors; optical beating; plasma wave excitation; temperature 200 K; temperature 300 K; terahertz resonant emission; Frequency measurement; HEMTs; Logic gates; MODFETs; Optical variables measurement; Plasmas; Resonant frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location
Rome
Print_ISBN
978-1-4244-6655-9
Type
conf
DOI
10.1109/ICIMW.2010.5612617
Filename
5612617
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