Simulation and comparison studies of Silicon Carbide and silicon power devices

Author

Sandeep, S. ; Komaragiri, Rama

fYear

2011

fDate

28-30 Jan. 2011

Firstpage

1

Lastpage

5

Abstract

SiC VDMOSFETs show great promise in high power/temperature operations when compared with their Si counterparts. The SiC MOSFETs have been compared with Si Double Diffused MOSFETs having the same physical dimensions. Si Double Diffused MOSFETs are designed and optimized through process and device simulations. The performance advantages like those in blocking voltage and on-resistance of the SiC MOSFET has been shown through the simulations. SPICE parameters of both Si and SiC devices have been extracted and the results are compared. The overall system advantages gained from the implementation of SiC on power devices has been demonstrated.

Keywords

MOSFET; SPICE; elemental semiconductors; power semiconductor devices; silicon; silicon compounds; wide band gap semiconductors; SPICE parameter; Si; SiC; VDMOSFET; double diffused MOSFET; high power-temperature operation; power semiconductor device; Electric fields; Logic gates; MOSFETs; SPICE; Semiconductor process modeling; Silicon; Silicon carbide; 3C; 4H; 6H SiC polytype; Breakdown voltage; Double implanted MOSFET; MOSFET; Power semiconductor devices; SPICE parameters; Si; VDMOSFET; on resistance; process and device simulations;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics (IICPE), 2010 India International Conference on

Conference_Location

New Delhi

Print_ISBN

978-1-4244-7883-5

Type

conf

DOI

10.1109/IICPE.2011.5728089

Filename

5728089