A both Gaussian and sinusoidal phase-to-amplitude converter for low-power ultra-high-speed direct digital synthesizers

Author

Borr, Teddy ; Juyon, Julien ; Tournier, Éric

Author_Institution

LAAS, CNRS, Toulouse, France

fYear

2011

fDate

26-29 June 2011

Firstpage

5

Lastpage

8

Abstract

This paper introduces a new bipolar differential pair topology for both Gaussian and sinusoidal signal shaping, to be used as a phase-to-amplitude converter alternative in low-power ultra-high-speed DDS. A DDS using this converter, with a 9-bit frequency resolution and an 8-bit amplitude resolution has been designed in a 0.13 μm SiGe BiCMOS technology, with f_t/f_max of 200/250 GHz, and simulated up to a 20 GHz operating clock frequency. It consumes 585 mW under a 2.8 V power supply. Simulated triangle shape allows an optimal SFDR of -44.5 dBc in sinus mode and a SLRR of -43.5 dBc in Gaussian mode.

Keywords

BiCMOS digital integrated circuits; Gaussian distribution; convertors; direct digital synthesis; low-power electronics; BiCMOS technology; DDS; Gaussian signal shaping; SiGe; bipolar differential pair topology; low-power direct digital synthesizers; operating clock frequency; sinusoidal phase-amplitude converter; size 0.13 mum; ultrahigh-speed direct digital synthesizers; voltage 2.8 V; word length 8 bit; BiCMOS integrated circuits; Clocks; Frequency synthesizers; Indium phosphide; Silicon germanium; Solid state circuits; Synthesizers;

fLanguage

English

Publisher

ieee

Conference_Titel

New Circuits and Systems Conference (NEWCAS), 2011 IEEE 9th International

Conference_Location

Bordeaux

Print_ISBN

978-1-61284-135-9

Type

conf

DOI

10.1109/NEWCAS.2011.5981205

Filename

5981205