DocumentCode
2717126
Title
Terahertz photomixing in strained silicon MODFET
Author
Meziani, Y.M. ; Moutaouakil, A.E. ; Velazquez, E. ; Diez, E. ; Fobelets, K. ; Otsuji, T.
Author_Institution
Fac. de Cienc., Salamanca Univ., Salamanca, Spain
fYear
2010
fDate
5-10 Sept. 2010
Firstpage
1
Lastpage
2
Abstract
Strained-Si modulation doped · eld effect transistors have been studied as a photomixer within terahertz range. It was subjected to two CW lasers where Δf=|f1-f2|=4 THz. A clear signal was observed with maximum located at around Vg=-0.15V and interpreted as due to the oscillation of the plasma waves under the gate bias.
Keywords
high electron mobility transistors; terahertz wave imaging; gate bias; modulation doped field effect transistor; oscillation; photomixer; plasma waves; strained silicon MODFET; terahertz photomixing; terahertz range; HEMTs; Logic gates; MODFETs; Oscillators; Plasma waves; Resonant frequency; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location
Rome
Print_ISBN
978-1-4244-6655-9
Type
conf
DOI
10.1109/ICIMW.2010.5612856
Filename
5612856
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