40 W Gallium-Nitride Microwave Doherty Power Amplifier

Author

Cho, Kyoung-Joon ; Kim, Wan-Jong ; Kim, Jong-Heon ; Stapleton, Shawn P.

Author_Institution

Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC

fYear

2006

fDate

11-16 June 2006

Firstpage

1895

Lastpage

1898

Abstract

This paper presents a 40 W gallium-nitride microwave Doherty power amplifier for WCDMA repeater applications. The main and peaking amplifier are implemented using two 20 W PEP GaN HEMTs. Its performance is evaluated for broadband gain, power efficiency and adjacent-channel-power-ratio (ACPR). The experimental results of the GaN Doherty amplifier yielded a power gain over 11 dB from 1.8 GHz to 2.5 GHz, 65 % power added efficiency at 40 W peak power. Good linearity performance of -55 dBc ACPR is obtained after using a baseband digital pre-distortion technique

Keywords

HEMT integrated circuits; III-V semiconductors; code division multiple access; gallium compounds; microwave power amplifiers; radio repeaters; 1.8 to 2.5 GHz; 11 dB; 40 W; GaN; HEMT; WCDMA repeater application; baseband digital pre-distortion technique; gallium-nitride microwave Doherty power amplifier; wideband code division multiple access; Broadband amplifiers; Gallium nitride; HEMTs; Linearity; MODFETs; Microwave amplifiers; Multiaccess communication; Performance gain; Power amplifiers; Repeaters; Digital pre-distortion; Doherty amplifier; Gallium Nitride; wideband code division multiple access (W-CDMA);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2006. IEEE MTT-S International

Conference_Location

San Francisco, CA

ISSN

0149-645X

Print_ISBN

0-7803-9541-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2006.249785

Filename

4015327