Narrow-band noise as a tool for diagnostics of solar cells PN junctions

Presented paper deals with noise diagnostics of defects in monocrystalline silicon solar cells PN junctions. Localized regions featuring increased concentration of donor or acceptor impurities, other element admixtures or other defects which cause the PN junction reverse breakdown voltage to be reduced. When a high electric field is applied to this PN junction, local breakdowns arise in micro-sized regions, which in turn can lead to the deterioration in quality or destruction of the PN junction. The useful tool for diagnostics of local defects in PN junctions is the reverse-biased PN junction narrow-band RMS noise current vs. reverse voltage measuring. The set of crystalline silicon solar cells with different structure was studied by this noise diagnostic method.