The Analysis of Power and Linearity Characteristics of SiGe HBTs at Low Temperatures

Author

Hsieh, Meng-Wei ; Hsin, Yue-Ming ; Liang, Kung-Hao ; Chan, Yi-Jen ; Tang, Denny ; Lee, Chwan-Ying

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chungli

fYear

2006

fDate

11-16 June 2006

Firstpage

2047

Lastpage

2050

Abstract

This work investigates the temperature dependence, from 300K to 77K, of the output power, PAE, and linearity for SiGe HBTs with and without SIC. The NADC pi/4DQPSK signal is used to analyze the linearity of SiGe HBTs. For device without SIC, the heterojunction barrier effect becomes more propound, which seriously reduces the current gain and cutoff frequency at cryogenic temperatures. The output power, PAE and linearity at 2.4 GHz decrease conspicuously with decreasing operation temperatures. This barrier effect can be negligible in SiGe HBT with SIC and thus the device achieves better power and linearity performance at cryogenic temperatures

Keywords

Ge-Si alloys; cryogenic electronics; differential phase shift keying; heterojunction bipolar transistors; low-temperature techniques; microwave bipolar transistors; semiconductor device models; 2.4 GHz; 4DQPSK signal; 77 to 300 K; HBT linearity; SiGe; cryogenic temperature; heterojunction barrier effect; linearity characteristics; power characteristics; temperature dependence; Cryogenics; Cutoff frequency; Germanium silicon alloys; Heterojunctions; Linearity; Power generation; Signal analysis; Silicon carbide; Silicon germanium; Temperature dependence; SIC; cryogenic temperatures; heterojunction barrier effect; linearity; power;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2006. IEEE MTT-S International

Conference_Location

San Francisco, CA

ISSN

0149-645X

Print_ISBN

0-7803-9541-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2006.249857

Filename

4015365