MOSFET distorsion analysis including series resistance modelling aspects

The new challenge of nanotechnology needs very accurate models for active devices. From this point of view the design of linear analog circuits lacks models for state-of-the-art MOS transistors to accurately describe distortion effects. This is mainly due to inaccurate modelling of the second order effects such as mobility degradation due to high vertical gate field, velocity saturation in the channel and short channel series resistance. After a rigorous description of series resistance components we included the series resistance in the MOS transistor model and used a compact expression of series resistance for computation reasons. The simulations using the new series resistance expression were in good agreement with experimental data.