• DocumentCode
    2718565
  • Title

    Electric and ferroelectric properties of Pb(Zr0.2Ti0.8)O3 thin films deposited by pulsed laser deposition on single crystalline substrates

  • Author

    Pintilie, L. ; Lisca, M. ; Alexe, M.

  • Author_Institution
    Nat. Inst. of Mater. Phys., Bucharest, Romania
  • Volume
    2
  • fYear
    2004
  • fDate
    4-6 Oct. 2004
  • Firstpage
    415
  • Abstract
    Epitaxial Pb(Zr0.2Ti0.8)O3 (PZT) thin films were grown on single crystalline Nb-doped SrTiO3 (STON) substrates by pulsed laser deposition (PLD). The top electrode was SrRuO3. The investigated electric and ferroelectric properties have revealed a strong asymmetry of the two PZT-electrode interfaces. A qualitative explanation based on the possible existence of a n+-p junction at the STON-PZT interface is suggested.
  • Keywords
    Schottky barriers; dielectric hysteresis; dielectric polarisation; ferroelectric capacitors; ferroelectric thin films; lead compounds; p-n junctions; semiconductor epitaxial layers; wide band gap semiconductors; PZT; PZT thin films; PZT-SrRuO3-Pt; PZT-electrode interface asymmetry; Pb(Zr0.2Ti0.8)O3 thin films; PbZrO3TiO3; PbZrO3TiO3-SrRuO3-Pt; SrTiO3:Nb; electric properties; ferroelectric properties; n-p junction; pulsed laser deposition; single crystalline Nb-doped SrTiO3 substrates; single crystalline substrates; Crystal microstructure; Crystallization; Dielectric thin films; Electrodes; Ferroelectric materials; Optical pulses; Pulsed laser deposition; Sputtering; Substrates; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International
  • Print_ISBN
    0-7803-8499-7
  • Type

    conf

  • DOI
    10.1109/SMICND.2004.1403034
  • Filename
    1403034
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2718565