DocumentCode
2718654
Title
A terahertz light emitter of a semiconductor-multilayer coupled cavity by frequency-mixing-signal generation
Author
Isu, Toshiro ; Fumiya, T. ; Toshikazu, T. ; Ken, M. ; Kitada, Takahiro
Author_Institution
Univ. of Tokushima, Tokushima, Japan
fYear
2010
fDate
5-10 Sept. 2010
Firstpage
1
Lastpage
2
Abstract
A coupled-cavity structure for terahertz light emitting devices is proposed. Strong frequency-mixing signal of the two cavity modes of the multilayer coupled-cavity on a (113)B GaAs substrate was observed. We found that an asymmetric structure was essential to emit a difference frequency light by a simulation of the optical field in the cavity.
Keywords
III-V semiconductors; aluminium compounds; distributed Bragg reflectors; gallium arsenide; integrated optics; optical frequency conversion; optical multilayers; terahertz wave generation; (113)B GaAs substrate; DBR layers; GaAs-AlAs; cavity modes; difference frequency light; frequency-mixing-signal generation; optical field; semiconductor-multilayer coupled cavity; terahertz light emitting devices; Cavity resonators; Electric fields; Gallium arsenide; Nonlinear optics; Optical coupling; Optical pulses; Optical reflection;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location
Rome
Print_ISBN
978-1-4244-6655-9
Type
conf
DOI
10.1109/ICIMW.2010.5612945
Filename
5612945
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