• DocumentCode
    2720308
  • Title

    Proposal for a simplified CMOS VLSI fabrication sequence

  • Author

    Bellutti, P. ; Boscardin, M. ; Giacomozzi, F. ; Soncini, G. ; Zen, M. ; Zorzi, N.

  • Author_Institution
    Div. of Microsensors & Syst. Integration, IRST, Trento, Italy
  • fYear
    1995
  • fDate
    34801
  • Firstpage
    42430
  • Lastpage
    42433
  • Abstract
    A simple modification of the standard CMOS process flow has been recently proposed whose goal is the process simplification: the well formation and the local oxidation (typically separated process phases) in this proposed modified process (DW-LOCOS) are simultaneously obtained by performing the well drive-in in dry O2 ambient. The aim of this work is to outline the possible advantages and drawbacks of the DW-LOCOS implementation in a standard CMOS process
  • Keywords
    CMOS integrated circuits; VLSI; integrated circuit technology; oxidation; CMOS VLSI fabrication; DW-LOCOS; drive-in; dry O2 ambient; local oxidation; process flow; well formation;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Improving the Efficiency of IC Manufacturing Technology, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • DOI
    10.1049/ic:19950925
  • Filename
    478206
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2720308