• DocumentCode
    2721223
  • Title

    The design of higher-order reference voltage generation circuits for single-ended memory interfaces

  • Author

    Beyene, Wendemagegnehu T.

  • Author_Institution
    Rambus Inc., Sunnyvale, CA, USA
  • fYear
    2012
  • fDate
    May 29 2012-June 1 2012
  • Firstpage
    127
  • Lastpage
    132
  • Abstract
    As the efforts to increase the data rate of single-ended signaling continues, the design of reference voltage generation circuit will likely become more challenging due to the uncorrelated supply-induced noise in particular and external and internal noise in general between signal input and the reference voltage. This is because the receiver of the single-ended interface relies on a reference voltage to reliably discriminate between logic high and low levels at the receiver input. This paper introduces the design of reference voltage generation circuits with the ability to track low and high frequency changes in power supply levels using high order networks. The advantage of the proposed method is demonstrated using measurement and simulation results of a high-speed system based on pseudo open drain signaling running at data rate of 12.8 Gbps.
  • Keywords
    integrated circuit noise; power supply circuits; reference circuits; storage management chips; bit rate 12.8 Gbit/s; data rate; high order networks; high-speed system; higher-order reference voltage generation circuit design; power supply levels; pseudo open drain signaling; receiver; single-ended memory interfaces; single-ended signaling; uncorrelated supply-induced noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
  • Conference_Location
    San Diego, CA
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4673-1966-9
  • Electronic_ISBN
    0569-5503
  • Type

    conf

  • DOI
    10.1109/ECTC.2012.6248817
  • Filename
    6248817