High density and low-cost silicon interposer using thin-film and organic lamination processes

In this paper, a new low-cost silicon interposer technology is introduced. Organic lamination processes are used for multi-layer signals and through via-holes are made by adjusting UV laser drilling. It is possible to make a 80 μm minimum through via using laser drilling. The fabricated interposer has an only 230 μm thickness and it has more than 6 metal layers including thin film metal. In this interposer, thin film spiral inductors and MIM capacitors can be integrated in the silicon substrate. For low-loss and high isolation, a TOLV (Through Organic Lining Via) and COLV (Coaxial Lining Via) can be made. The fabricated coaxial via has very low loss, 0.07 dB at 10 GHz, and high isolation properties for a wide frequency range, more than 40 dB at 0~40 GHz.