• DocumentCode
    2721671
  • Title

    High-frequency measurements of TSV failures

  • Author

    Kim, Joohee ; Jung, Daniel ; Cho, Jonghyun ; Pak, Jun So ; Yook, Jong Min ; Kim, Jun Chul ; Kim, Joungho

  • Author_Institution
    Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea
  • fYear
    2012
  • fDate
    May 29 2012-June 1 2012
  • Firstpage
    298
  • Lastpage
    303
  • Abstract
    Due to a lot of thermal and mechanical loads during TSV process or post TSV process such as metallization and die stacking, disconnection failure can occur which results in 3D IC yield loss. Thus, a non-destructive diagnostic method by using one point probing for TSV failures is proposed to detect and differentiate TSV failure types and locations. With the fabricated test vehicles with disconnection failures, high-frequency measurements are conducted to verify the proposed diagnostic method, and full and partial disconnection failure is analyzed based on the high-frequency measurement results.
  • Keywords
    failure analysis; integrated circuit interconnections; integrated circuit measurement; integrated circuit reliability; integrated circuit yield; 3D IC yield loss; TSV failures; die stacking; high frequency measurements; mechanical loads; nondestructive diagnostic method; one point probing; partial disconnection failure; thermal loads; through-silicon-vias; Analytical models; Capacitance; Integrated circuit modeling; Metals; Through-silicon vias; Transmission line measurements;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
  • Conference_Location
    San Diego, CA
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4673-1966-9
  • Electronic_ISBN
    0569-5503
  • Type

    conf

  • DOI
    10.1109/ECTC.2012.6248845
  • Filename
    6248845