DocumentCode
2721671
Title
High-frequency measurements of TSV failures
Author
Kim, Joohee ; Jung, Daniel ; Cho, Jonghyun ; Pak, Jun So ; Yook, Jong Min ; Kim, Jun Chul ; Kim, Joungho
Author_Institution
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea
fYear
2012
fDate
May 29 2012-June 1 2012
Firstpage
298
Lastpage
303
Abstract
Due to a lot of thermal and mechanical loads during TSV process or post TSV process such as metallization and die stacking, disconnection failure can occur which results in 3D IC yield loss. Thus, a non-destructive diagnostic method by using one point probing for TSV failures is proposed to detect and differentiate TSV failure types and locations. With the fabricated test vehicles with disconnection failures, high-frequency measurements are conducted to verify the proposed diagnostic method, and full and partial disconnection failure is analyzed based on the high-frequency measurement results.
Keywords
failure analysis; integrated circuit interconnections; integrated circuit measurement; integrated circuit reliability; integrated circuit yield; 3D IC yield loss; TSV failures; die stacking; high frequency measurements; mechanical loads; nondestructive diagnostic method; one point probing; partial disconnection failure; thermal loads; through-silicon-vias; Analytical models; Capacitance; Integrated circuit modeling; Metals; Through-silicon vias; Transmission line measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
Conference_Location
San Diego, CA
ISSN
0569-5503
Print_ISBN
978-1-4673-1966-9
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2012.6248845
Filename
6248845
Link To Document