DocumentCode
2722045
Title
High-κ Hf-based charge trapping layer with Al2O3 blocking oxide for high-density flash memory
Author
Maikap, S. ; Tzeng, P.J. ; Lee, L.S. ; Lee, H.Y. ; Wang, C.C. ; Tsai, P.H. ; Chang-Liao, K.S. ; Chen, W.J. ; Liu, K.C. ; Jeng, P.R. ; Tsai, M.J.
Author_Institution
Electron. Res. & Service Organ., Ind. Technol. Res. Inst., Hsinchu
fYear
2006
fDate
24-26 April 2006
Firstpage
1
Lastpage
2
Abstract
The high-kappa Hf-based charge trapping layer with Al2O3 blocking oxide in metal/Al2O3/HfO2/SiO2 /silicon (MAHOS) structure is proposed. The Al2O3 as a blocking oxide on high-kappa HfO2 and HfAlO charge trapping layers can improve the program/erase speed and has good retention characteristics, indicating that the MAHOS structure is a promising candidate for future high-speed flash memory. The charge trapping characteristics with different metal gates are also investigated
Keywords
aluminium compounds; electron traps; flash memories; hafnium compounds; hole traps; integrated circuit reliability; silicon compounds; HfAlO; MAHOS structure; SiO2-HfO2-Al2O3; blocking oxide; charge trapping layer; high-speed flash memory; metal gates; silicon; Annealing; Electron traps; Flash memory; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; SONOS devices; Silicon; Temperature; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 2006 International Symposium on
Conference_Location
Hsinchu
ISSN
1524-766X
Print_ISBN
1-4244-0181-4
Electronic_ISBN
1524-766X
Type
conf
DOI
10.1109/VTSA.2006.251055
Filename
4016591
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