DocumentCode
2722171
Title
Low-Leakage Diode String Design without Extra Circuits for ESD Applications
Author
Huang, Shao-Chang ; Chu, Yu-Hung ; Kuo, Chen-Chi ; Huang, T.Y. ; Song, M.H. ; Chang, Mi-Chang
Author_Institution
Taiwan Semicond. Manuf. Co., Hsinchu
fYear
2006
fDate
24-26 April 2006
Firstpage
1
Lastpage
4
Abstract
A novel low-leakage diode string design using separate diode objects in 0.18mum CMOS processes is proposed in this paper. Diode strings can be divided into two (or three) groups with only a large shallow trench isolation (STI) used as spacing. With STI used to separate the groups, the diode string successfully prevents excessive current leakage. The turn-on voltage of the diode string can be derived from the equations concluded from the experiments
Keywords
electrostatic discharge; isolation technology; semiconductor diodes; 0.18 micron; CMOS processes; ESD applications; STI; low-leakage diode string design; shallow trench isolation; CMOS process; Circuits; Electrostatic discharge; Equations; Manufacturing industries; Protection; Semiconductor device manufacture; Semiconductor diodes; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 2006 International Symposium on
Conference_Location
Hsinchu
ISSN
1524-766X
Print_ISBN
1-4244-0181-4
Electronic_ISBN
1524-766X
Type
conf
DOI
10.1109/VTSA.2006.251063
Filename
4016599
Link To Document