DocumentCode
2722304
Title
PSDG MOSFET
Author
Xiao, Deyuan ; Chen, Gary ; Lee, Roger ; Lu, Daniel ; Tan, Leong ; Liu, Yung ; Shen, C.C. ; Kim, Jong Woo
Author_Institution
Memory Technol. Dev. Center, Semicond. Manuf. Int. Corp., Shanghai
fYear
2006
fDate
24-26 April 2006
Firstpage
1
Lastpage
2
Abstract
A new planar split dual gate MOSFET device (PSDG MOSFET) is reported for the first time. The theoretical calculation, 3D device simulation as well as the experiment data show that with the two independent split dual gates in PSDG MOSFET, it can provide dynamical control of the device characteristics, such as threshold voltage (Vt) and sub-threshold swing (SS) as well as the Idsat of the device
Keywords
MOSFET; semiconductor device models; 3D device simulation; PSDG MOSFET; dynamical control; planar split dual gate MOSFET; CMOS technology; Dielectrics; Energy management; Leakage current; MOSFET circuits; Modeling; Partial response channels; Semiconductor device manufacture; Threshold voltage; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications, 2006 International Symposium on
Conference_Location
Hsinchu
ISSN
1524-766X
Print_ISBN
1-4244-0181-4
Electronic_ISBN
1524-766X
Type
conf
DOI
10.1109/VTSA.2006.251068
Filename
4016604
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