Relationship of HfO2 Material Properties and Transistor Performance

Author

Kirsch, P.D. ; Quevedo, M.A. ; Pant, G. ; Krishnan, Sridhar ; Song, S.C. ; Li, H.J. ; Peterson, J.J. ; Lee, B.H. ; Wallace, R.W. ; Kim, M. ; Gnade, B.E

Author_Institution

SEMATECH, Austin, TX

fYear

2006

fDate

24-26 April 2006

Firstpage

1

Lastpage

2

Abstract

We report on the relationship between the materials science of a HfO₂/TiN stack and transistor performance. Atomic layer deposited (ALD) HfO₂ can be scaled to a physical thickness of 1.2 nm resulting in EOT 1.0 nm. In scaling HfO₂ the interfacial SiO₂ layer (IL) is also scaled and the extent of HfO₂ crystallization is reduced. Reduced HfO₂ crystallinity is coincident with reduced threshold voltage instability (10 mV) and increased electron mobility (82% Univ. SiO ₂). For these stable, high mobility devices, we find that HfO₂ can coordinate N as Hf-N without excessive nitridation of the IL

Keywords

atomic layer deposition; dielectric materials; hafnium compounds; silicon compounds; titanium compounds; transistors; 1 nm; 10 mV; HfO₂-TiN; SiO₂; atomic layer; crystallization; electron mobility; high mobility devices; material properties; materials science; nitridation; threshold voltage instability; transistor performance; Annealing; Atomic layer deposition; Crystallization; Dielectrics; Electron mobility; Grain boundaries; Hafnium oxide; Material properties; Threshold voltage; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 2006 International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

1-4244-0181-4

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2006.251090

Filename

4016626