DocumentCode
2724163
Title
EEODM: An effective BIST scheme for ROMs
Author
Zorian, Yervant ; Ivanov, André
Author_Institution
AT&T Bell Lab., Princeton, NJ, USA
fYear
1990
fDate
10-14 Sep 1990
Firstpage
871
Lastpage
879
Abstract
The authors propose a novel BIST (built-in self-test) scheme for ROMs that has an extremely low possibility of error escape. The scheme is referred to as exhaustive enhanced output data modification (EEODM). For the test generation. EEODM uses the exhaustive test technique. This guarantees the complete coverage of all combinational faults in the ROM. For output data compaction, EEODM uses an enhanced form of output data modification (ODM), along with bidirectional polynomial division. The hardware and test-time overhead was compared with that associated with other known BIST schemes. EEODM turns out to be very attractive, since it achieves much higher fault coverage than any of the other known schemes, and yet the associated overhead is very reasonable
Keywords
automatic testing; built-in self test; integrated circuit testing; integrated memory circuits; logic testing; read-only storage; BIST; ROMs; combinational faults; error escape; exhaustive enhanced output data modification; output data compaction; output data modification; test-time overhead; Automatic testing; Built-in self-test; Circuit faults; Circuit testing; Compaction; Controllability; EPROM; PROM; Polynomials; Read only memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Test Conference, 1990. Proceedings., International
Conference_Location
Washington, DC
Print_ISBN
0-8186-9064-X
Type
conf
DOI
10.1109/TEST.1990.114105
Filename
114105
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