• DocumentCode
    2724163
  • Title

    EEODM: An effective BIST scheme for ROMs

  • Author

    Zorian, Yervant ; Ivanov, André

  • Author_Institution
    AT&T Bell Lab., Princeton, NJ, USA
  • fYear
    1990
  • fDate
    10-14 Sep 1990
  • Firstpage
    871
  • Lastpage
    879
  • Abstract
    The authors propose a novel BIST (built-in self-test) scheme for ROMs that has an extremely low possibility of error escape. The scheme is referred to as exhaustive enhanced output data modification (EEODM). For the test generation. EEODM uses the exhaustive test technique. This guarantees the complete coverage of all combinational faults in the ROM. For output data compaction, EEODM uses an enhanced form of output data modification (ODM), along with bidirectional polynomial division. The hardware and test-time overhead was compared with that associated with other known BIST schemes. EEODM turns out to be very attractive, since it achieves much higher fault coverage than any of the other known schemes, and yet the associated overhead is very reasonable
  • Keywords
    automatic testing; built-in self test; integrated circuit testing; integrated memory circuits; logic testing; read-only storage; BIST; ROMs; combinational faults; error escape; exhaustive enhanced output data modification; output data compaction; output data modification; test-time overhead; Automatic testing; Built-in self-test; Circuit faults; Circuit testing; Compaction; Controllability; EPROM; PROM; Polynomials; Read only memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Test Conference, 1990. Proceedings., International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-8186-9064-X
  • Type

    conf

  • DOI
    10.1109/TEST.1990.114105
  • Filename
    114105