DocumentCode
2724668
Title
O-band InAs quantum dot (QD) laser diode with Sb-molecule sprayed dot-in-well (DWELL) structures fabricated on GaAs substrates
Author
Yamamoto, Naokatsu ; Akahane, Kouichi ; Sotobayashi, Hideyuki ; Tsuchiya, Masahiro
Author_Institution
Nat. Inst. of Inf. & Commun. Technol. (NICT), Koganei
fYear
2008
fDate
7-10 July 2008
Firstpage
1
Lastpage
2
Abstract
O-band quantum-dot(QD) laser-diode(LD) has been successfully demonstrated with novel InAs dot-in-well structures employed on GaAs-wafers. Improvement of crystal-qualities and enhancement of electroluminescence-intensities have been brought about to the LD-devices by Sb-molecule around InAs-QDs during molecular-beam-epitaxy.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum dot lasers; dot-in-well; molecular-beam-epitaxy; quantum dot laser diode; Atomic layer deposition; Diode lasers; Electroluminescence; Gallium arsenide; Indium gallium arsenide; Power lasers; Quantum dot lasers; Spraying; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Opto-Electronics and Communications Conference, 2008 and the 2008 Australian Conference on Optical Fibre Technology. OECC/ACOFT 2008. Joint conference of the
Conference_Location
Sydney
Print_ISBN
978-0-85825-807-5
Electronic_ISBN
978-0-85825-807-5
Type
conf
DOI
10.1109/OECCACOFT.2008.4610531
Filename
4610531
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