The effect of depletion layer on the cut off frequency of AlGaN/GaN high electron mobility transistors

An analytical model for I-V characteristics of AlGaN/GaN based HEMTs has been developed that is capable to predict accurately the effects of depletion layer thickness on the cut off frequency in drain currents, gate biases and gate length. Salient features of the model are incorporated of fully and partially occupied sub-bands in the interface quantum well, combined with a self-consistent solution of the Schrödinger and Poisson equations. The calculated model results are in very good agreement with existing experimental data for AlGaN/GaN based HEMTs device.