DocumentCode
2725826
Title
Amplification of space charge waves at very high electric fields in GaAs films
Author
Garcia-Barrientos, A. ; Palankovski, V. ; Grimalsky, V.
Author_Institution
Dept. of Mechatron., Polytech. Univ. of Pachuca (UPP), Hidalgo, Mexico
fYear
2010
fDate
16-19 May 2010
Firstpage
161
Lastpage
164
Abstract
The nonlinear interaction of space charge waves including the amplification in microwave range at high electric fields (10-300 kV/cm) in n-GaAs films, possessing the negative differential conductance phenomenon, is presented. Both the amplified signal at the first harmonic of the input signal and the generation of second and third harmonics of the input signal, which are due to the negative differential resistance effect at very high electric fields are shown.
Keywords
III-V semiconductors; carrier mobility; gallium arsenide; semiconductor thin films; space charge waves; GaAs; electric fields; microwave range; negative differential conductance; negative differential resistance; space charge waves; thin films; Conductive films; Conductivity; Electrodes; Electrons; Frequency; Gallium arsenide; Microelectronics; Power harmonic filters; Semiconductor devices; Space charge;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics Proceedings (MIEL), 2010 27th International Conference on
Conference_Location
Nis
Print_ISBN
978-1-4244-7200-0
Type
conf
DOI
10.1109/MIEL.2010.5490510
Filename
5490510
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