DocumentCode
2726335
Title
Sporadic effect of leadscan machine to CMOS ESD low yielding lots
Author
Almazar, Rudy J.
Author_Institution
Motorola Phils Inc., USA
fYear
1995
fDate
12-14 Sept. 1995
Firstpage
118
Lastpage
123
Abstract
Integrated circuit manufacturing data history shows that Complementary Metal Oxide Semiconductor(CMOS) is one of the most Electrostatic Discharge (ESD) susceptible product technology. Sporadic low yielding lots on CMOS devices were analyzed as ESD failure related. After narrowing down the potential sources of ESD failures on the manufacturing process and identified the Back-End leadscan process as the most probable source of failure, further studies were conducted in this area to zero-out the "red-x". Process mapping, B vs C comparative study and a factorial experiment were performed, statistical tools were utilized and the root cause was identified and corrected. Implementation of the recommended corrective action resulted in elimination of sporadic ESD low yielding lots on CMOS devices and 62% reduction on ESD electrical gate failures.
Keywords
CMOS integrated circuits; electrostatic discharge; failure analysis; integrated circuit yield; statistical analysis; CMOS ESD; ESD electrical gate failures; ESD failures; back-end leadscan process; electrostatic discharge; integrated circuit manufacturing; leadscan machine; sporadic low yielding lots; statistical tools; CMOS technology; Electrostatic discharge; Failure analysis; History; Integrated circuit manufacture; Integrated circuit technology; Integrated circuit yield; Manufacturing processes;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1995
Conference_Location
Phoenix, AZ, USA
Print_ISBN
1-878303-59-7
Type
conf
DOI
10.1109/EOSESD.1995.478276
Filename
478276
Link To Document