5.9 GHZ Inductor-Less Low Noise Amplifier

Author

Ahmed, Abdulhakim ; Wight, James Stuart

Author_Institution

Dept. of Electron., Carleton Univ., Ottawa, Ont.

fYear

2006

fDate

18-21 June 2006

Firstpage

17

Lastpage

17

Abstract

This paper presents a novel way to design an inductor-less low noise amplifier. The LNA created uses an artificial tank (AT) created from a damped ring oscillator (RO) to replace the LC-tank normally used in tuned circuits. The measured results show the LNA has an 18 dB voltage gain, 2.3 dB noise figure, an IP3 of -11 dBm, a 1 dB compression point of -19 dBm, and a power consumption of 4.85 mW. The main advantage of using the AT is to minimize the silicon area and to operate at a high frequency of 5.9 GHz. The prototype, made using CMOS 0.18-micron technology, occupied one-fiftieth of the silicon area generally used by circuits of this type

Keywords

CMOS integrated circuits; low noise amplifiers; microwave amplifiers; microwave oscillators; silicon; 0.18 micron; 18 dB; 2.3 dB; 4.85 mW; 5.9 GHz; CMOS technology; Si; artificial tank; damped ring oscillator; inductorless LNA; inductorless low noise amplifier; silicon area; CMOS technology; Circuit noise; Gain measurement; Low-noise amplifiers; Noise measurement; Power measurement; RLC circuits; Ring oscillators; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2006 IEEE North-East Workshop on

Conference_Location

Gatineau, Que.

Print_ISBN

1-4244-0416-9

Electronic_ISBN

1-4244-0417-7

Type

conf

DOI

10.1109/NEWCAS.2006.250898

Filename

4016929