• DocumentCode
    2727784
  • Title

    Low temperature bump-less Cu-Cu bonding enhancement with self assembled monolayer (SAM) passivation for 3-D integration

  • Author

    Lim, Dau Fatt ; Wei, Jun ; Ng, Chee Mang ; Tan, Chuan Seng

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
  • fYear
    2010
  • fDate
    1-4 June 2010
  • Firstpage
    1364
  • Lastpage
    1369
  • Abstract
    Self assembled monolayer (SAM) of alkane-thiol of 6-carbon (1-hexanethiol, C6) chain length is applied on Cu surface (deposited on Si substrate) and examined carefully. Firstly, the ability of SAM adsorption onto Cu surface is confirmed by the sharp rise of water contact angle (CA) on the surface. Next, the thermal stability of SAM when it is stored in different environments is studied. The CA decreases when it is stored in clean room ambient due to partial desorption of the SAM. The desorption behavior of SAM is found to be reversely proportional to the immersion time in SAM solution, whereby longer immersion time shows less desorption. SAM desorption can slowed down significantly if samples are kept at lower temperature (~4°C). Substantial desoprtion of SAM is observed when the samples are annealed above a critical temperature when SAM desorb rapidly from the Cu surface. Surface analysis confirms that Cu surface protected by SAM contains less oxygen. Finally, bonding experiments are performed to validate effectiveness of SAM in tailoring the Cu surface for bonding enhancement at low temperature. Results show that uniform Cu-Cu bond with higher shear strength is obtained as a result of SAM passivation.
  • Keywords
    Annealing; Costs; Diffusion bonding; Manufacturing; Passivation; Surface cleaning; Surface contamination; Temperature; Thermal stresses; Three-dimensional integrated circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4244-6410-4
  • Electronic_ISBN
    0569-5503
  • Type

    conf

  • DOI
    10.1109/ECTC.2010.5490639
  • Filename
    5490639