• DocumentCode
    2727901
  • Title

    ESD reliability impact of p+ pocket implant on double implanted NLDD MOSFET

  • Author

    Consiglio, Rosario ; Huang, Tiao Yuan

  • Author_Institution
    VLSI Technol. Inc., San Jose, CA, USA
  • fYear
    1995
  • fDate
    12-14 Sept. 1995
  • Firstpage
    199
  • Lastpage
    204
  • Abstract
    An ESD study was conducted on a process using an arsenic NLDD, a boron pocket implant, and an 90 angstrom gate oxide. Increasing the boron pocket and arsenic NLDD implant doses increased the ESD robustness of the NMOST. However, heavier B11 pocket implants of 1.5E13 atoms/cm/sup 2/ were found to create parasitic n-p-n bipolar transistors under the n-well tap diffusions, increasing n-well tap resistance.
  • Keywords
    CMOS integrated circuits; MOSFET; boron; electrostatic discharge; integrated circuit reliability; ion implantation; semiconductor device reliability; 90 A; As LDD implant dose; B pocket implant; ESD reliability; NMOSFET; Si:As; Si:B; double implanted LDD MOSFET; gate oxide; lightly doped drain; n-well tap diffusions; p/sup +/ pocket implant; parasitic n-p-n bipolar transistors; Bipolar transistors; Boron; Electrostatic discharge; Implants; Robustness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1995
  • Conference_Location
    Phoenix, AZ, USA
  • Print_ISBN
    1-878303-59-7
  • Type

    conf

  • DOI
    10.1109/EOSESD.1995.478285
  • Filename
    478285
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2727901