DocumentCode
2729350
Title
A Study of Asymmetrical Behaviour in Advanced Nano SRAM Devices
Author
Lin, Hung-Sung ; Chang, Wen-Tung ; Chen, Chun-Lin ; Huang, Tsui-Hua ; Chiang, Vivian ; Chen, Chun-Ming
Author_Institution
United Microelectron. Corp. Ltd., Hsinchu
fYear
2006
fDate
3-7 July 2006
Firstpage
63
Lastpage
66
Abstract
The importance of understanding asymmetrical behaviour in SRAM has increased as the technology node shrinks below 100 nm. Single bit failure can possibly be caused by the malfunction of any of the six transistors in a standard SRAM cell. In order to understand the asymmetrical behaviour in advanced nano SRAM devices, nanoprobing is introduced to perform transistor level fault isolation prior to attempting physical failure analysis (PFA)
Keywords
SRAM chips; failure analysis; nanoelectronics; nano SRAM devices; nanoprobing; physical failure analysis; single bit failure; transistor level fault isolation; Circuit faults; Failure analysis; Isolation technology; Nanoscale devices; Random access memory; Scanning electron microscopy; Transistors; Transmission electron microscopy; Vehicles; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
Conference_Location
Singapore
Print_ISBN
1-4244-0205-0
Electronic_ISBN
1-4244-0206-9
Type
conf
DOI
10.1109/IPFA.2006.250998
Filename
4017023
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