DocumentCode
2729573
Title
The New Concept for Particle Remove in Wet Bench Cleaning
Author
Chen, Sheng-Hsiung ; Chen, Shen-Li ; Chung, Long-Yeu ; Yeh, Wen-Kuan
Author_Institution
Dept. of Electr. Eng., Tung Fang Inst. of Technol., Kaohsiung
fYear
2006
fDate
3-7 July 2006
Firstpage
137
Lastpage
140
Abstract
For the manufacturing of submicron or deep submicron ULSIs, it is important to completely suppress particles and contamination created on the silicon wafer surface. The tradition concept for cleaning need was used chemical content (APM, ammonia and hydrogen peroxide mixtures) to play a major role. Unfortunately, the SC-1 (APM) had negative effect on surface damage. In recent years, it has been modified to incorporate a more dilute solution in order to reduce surface micro-roughness caused by ammonium hydroxide. In this paper, a new thinking was proposed to use DI water quick dump rinse (QDR) mode change from conversation set-up to an improvement mode. A modified recipe with modified using DIW can totally remove the particle during process
Keywords
ULSI; silicon; surface cleaning; DIW; ULSI; particle removal; quick dump rinse; silicon wafer surface; wet bench cleaning; Chemicals; Hafnium; Manufacturing; Semiconductor devices; Semiconductor process modeling; Silicon compounds; Substrates; Surface cleaning; Surface contamination; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
Conference_Location
Singapore
Print_ISBN
1-4244-0205-0
Electronic_ISBN
1-4244-0206-9
Type
conf
DOI
10.1109/IPFA.2006.251015
Filename
4017040
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