• DocumentCode
    2729573
  • Title

    The New Concept for Particle Remove in Wet Bench Cleaning

  • Author

    Chen, Sheng-Hsiung ; Chen, Shen-Li ; Chung, Long-Yeu ; Yeh, Wen-Kuan

  • Author_Institution
    Dept. of Electr. Eng., Tung Fang Inst. of Technol., Kaohsiung
  • fYear
    2006
  • fDate
    3-7 July 2006
  • Firstpage
    137
  • Lastpage
    140
  • Abstract
    For the manufacturing of submicron or deep submicron ULSIs, it is important to completely suppress particles and contamination created on the silicon wafer surface. The tradition concept for cleaning need was used chemical content (APM, ammonia and hydrogen peroxide mixtures) to play a major role. Unfortunately, the SC-1 (APM) had negative effect on surface damage. In recent years, it has been modified to incorporate a more dilute solution in order to reduce surface micro-roughness caused by ammonium hydroxide. In this paper, a new thinking was proposed to use DI water quick dump rinse (QDR) mode change from conversation set-up to an improvement mode. A modified recipe with modified using DIW can totally remove the particle during process
  • Keywords
    ULSI; silicon; surface cleaning; DIW; ULSI; particle removal; quick dump rinse; silicon wafer surface; wet bench cleaning; Chemicals; Hafnium; Manufacturing; Semiconductor devices; Semiconductor process modeling; Silicon compounds; Substrates; Surface cleaning; Surface contamination; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
  • Conference_Location
    Singapore
  • Print_ISBN
    1-4244-0205-0
  • Electronic_ISBN
    1-4244-0206-9
  • Type

    conf

  • DOI
    10.1109/IPFA.2006.251015
  • Filename
    4017040