DocumentCode
2729618
Title
Ultra-Short-Channel Characteristics of Planar MOSFETs With Block Oxide
Author
Lin, Jyi-Tsong ; Eng, Yi-Chuen ; Huang, Kuo-Dong ; Lee, Tai-Yi ; Lin, Kao-Cheng
Author_Institution
Dept. of Electr. Eng., National Sun Yat-Sen Univ., Kaohsiung
fYear
2006
fDate
3-7 July 2006
Firstpage
146
Lastpage
149
Abstract
In this work, the investigation of block oxide used in planar MOSFETs has been studied. To solve these above issues and for the comparison, we propose two novel device architectures; one is called the FDSOI with block oxide (bFDSOI) and the other is called the Si on partial insulator with block oxide field-effect transistor (bSPIFET)
Keywords
MOSFET; insulators; silicon-on-insulator; FDSOI; block oxide; partial insulator; planar MOSFET; ultra short channel characteristics; Annealing; Chemical technology; Dry etching; FETs; Lithography; MOSFETs; Planarization; Scanning electron microscopy; Silicon on insulator technology; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the
Conference_Location
Singapore
Print_ISBN
1-4244-0205-0
Electronic_ISBN
1-4244-0206-9
Type
conf
DOI
10.1109/IPFA.2006.251017
Filename
4017042
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