1.575 GHz to 2.48 GHz multi-standard low noise amplifier using 0.18-µm CMOS with on-chip matching

A wideband Low Noise Amplifier (LNA) is demonstrated by using the inductively degenerated LNA architecture. This wideband operates in range of 1.575 GHz to 2.48 GHz frequency band. The design of the LNA utilizes the Power Constraint Noise Optimization (PCNO) technique in determining the device size. The simulation results achieved the maximum power gain S₂₁ at 13.7 dB to 10.3 dB, input reflection coefficient S₁₁ at -7.2 dB to -9.5 dB, output reflection coefficient S₂₂ at -17 dB to -10 dB, reverse isolation S₁₂ at -54.4 dB to -52.1 dB and noise figure (NF) at 2.31 dB to 3.12 dB in the frequency range. Linearity result is based on the Input Third-Order Intercept Point (IIP3) is -5.48 dBm. The design draws and obtained at low total power consumption at 14.4 mW and all results met specification. The design was implemented in 0.18 μm CMOS technology. The performances obtained are from the LNA with on-chip matching circuitries.