DocumentCode
2729734
Title
Fast electroplating TSV process development for the via-last approach
Author
Li, H.Y. ; Liao, E. ; Pang, X.F. ; Yu, H. ; Yu, X.X. ; Sun, J.Y.
Author_Institution
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
fYear
2010
fDate
1-4 June 2010
Firstpage
777
Lastpage
780
Abstract
One of challenge for the 3D integration by the TSV approach is the electroplating. Electroplating quality and time are important parameters for TSV cost and application. Solid Cu filling TSV (Through Si Via) with via diameter 20 μm and 65μm depth is achieved by the DC (directly current) electroplating within 40 minutes on 8 inch wafer.
Keywords
Chemical processes; Costs; Filling; Materials science and technology; Microelectronics; Semiconductor materials; Solids; Sun; Testing; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th
Conference_Location
Las Vegas, NV, USA
ISSN
0569-5503
Print_ISBN
978-1-4244-6410-4
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2010.5490740
Filename
5490740
Link To Document