Modeling of the Leakage Current in Ultrathin La2O3 Films Using a Generalized Power Law Equation

Author

Miranda, E. ; Iwai, H.

Author_Institution

Departament d´´Enginyeria Electronica, Univ. Autonoma de Barcelona, Bellaterra

fYear

2006

fDate

3-7 July 2006

Firstpage

306

Lastpage

310

Abstract

The leakage current in electrically stressed MOS structures with ultrathin lanthanum oxide (La₂O₃) films was investigated. The samples were obtained by the electron-beam evaporation technique and annealed in-situ in ultra-high vacuum conditions. We show that the application of successive voltage ramps leads to a set of current-voltage (I-V) characteristics that can be simulated using a power-law model with series and parallel resistances. This particular voltage dependence, in combination with the stepwise increase exhibited by the current-time (I-t) characteristic during a constant voltage stress, suggests that the leakage current through the oxide layer might be ascribed to multiple dielectric breakdown conduction

Keywords

MIS structures; annealing; dielectric thin films; electric breakdown; equivalent circuits; lanthanum compounds; leakage currents; vacuum deposition; La₂O₃; MOS structures; constant voltage stress; current-time characteristic; current-voltage characteristics; dielectric breakdown conduction; electron-beam evaporation; generalized power law equation; in-situ annealing; leakage current modeling; power-law model; successive voltage ramps; ultra-high vacuum conditions; ultrathin films; Annealing; Breakdown voltage; Capacitors; Collaboration; Dielectric breakdown; Diodes; Equations; Leakage current; Stress; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2006. 13th International Symposium on the

Conference_Location

Singapore

Print_ISBN

1-4244-0205-0

Electronic_ISBN

1-4244-0206-9

Type

conf

DOI

10.1109/IPFA.2006.251051

Filename

4017076