DocumentCode
2730420
Title
Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors
fYear
1997
fDate
8-11 Sept. 1997
Abstract
The following topics were dealt with: epitaxy; characterization; processing; high-power semiconductor devices; emitters and optoelectronics; heterojunction transistors; nanoelectronics and nanophotonics; modeling
Keywords
III-V semiconductors; field effect transistors; heterojunction bipolar transistors; light emitting diodes; power semiconductor devices; semiconductor device models; semiconductor growth; semiconductor lasers; semiconductor materials; semiconductor quantum dots; characterization; compound semiconductors; emitters; epitaxy; heterojunction transistors; high-power semiconductor devices; modeling; nanoelectronics; nanophotonics; optoelectronics; processing;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location
San Diego, CA, USA
Print_ISBN
0-7503-0556-8
Type
conf
DOI
10.1109/ISCS.1998.711527
Filename
711527
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