• DocumentCode
    2731581
  • Title

    Field Degradation of Memory Components from Hot Carriers

  • Author

    Bornstein, William ; Dunn, Robert ; Spielberg, Tony

  • Author_Institution
    IBM Technol. & Qualification, East Fishkill, NY
  • fYear
    2006
  • fDate
    26-30 March 2006
  • Firstpage
    294
  • Lastpage
    298
  • Abstract
    Over the past three years IBM has experienced two independent component field incidents from hot carriers. Each of these events occurred on procured memory devices. We investigated the root cause failure analysis, stresses performed, failure modeling, and pertinent application conditions. We conclude by showing how application voltages and duty cycle play critical roles in hot carrier degradation
  • Keywords
    SRAM chips; failure analysis; hot carriers; integrated circuit reliability; SRAM chips; duty cycle; failure analysis; field degradation; hot carriers; memory components; Circuits; Clocks; Degradation; Failure analysis; Hot carriers; Random access memory; Semiconductor device measurement; Stress; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7803-9498-4
  • Electronic_ISBN
    0-7803-9499-2
  • Type

    conf

  • DOI
    10.1109/RELPHY.2006.251231
  • Filename
    4017172
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2731581