DocumentCode
2732124
Title
Chemical structure of buried interfaces in CdTe thin film solar cells
Author
Pookpanratana, S. ; Khan, F. ; Zhang, Y. ; Heske, C. ; Weinhardt, L. ; Bär, M. ; Liu, X. ; Paudel, N. ; Compaan, A.
Author_Institution
Dept. of Chem., Univ. of Nevada, Las Vegas, NV, USA
fYear
2010
fDate
20-25 June 2010
Abstract
We have used a lift-off technique and X-ray photoelectron spectroscopy to probe initially buried interfaces of a CdTe solar cell after CdCl2 and contact treatments. We find that the cleavage takes place at or near the CdTe/CdS interface. On both surfaces, Cl is present, most likely due to diffusion through the CdTe layer during the high-temperature CdCl2 activation step. Te is present on both cleavage-exposed surfaces, as well as on the external back contact surface before cleavage. We find that the Te atoms are in (at least) two different chemical environments. From our data we are able to paint a comprehensive picture of the chemical structure of the CdTe/CdS interface.
Keywords
II-VI semiconductors; X-ray photoelectron spectra; cadmium compounds; chemical structure; diffusion; solar cells; thin film devices; CdCl2; CdTe-CdS; X-ray photoelectron spectroscopy; buried interface; chemical structure; cleavage-exposed surface; contact treatment; diffusion; lift-off technique; thin film solar cell; Chemicals; Copper; Gold; Photovoltaic cells; Surface morphology; Surface treatment; Three dimensional displays;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location
Honolulu, HI
ISSN
0160-8371
Print_ISBN
978-1-4244-5890-5
Type
conf
DOI
10.1109/PVSC.2010.5614076
Filename
5614076
Link To Document