Bonding/barrier layers on bismuth telluride (Bi2Te3) for high temperature applications

Author

Lin, Wen P. ; Wang, Pin J. ; Lee, Chin C.

Author_Institution

Electr. Eng. & Comput. Sci., Univ. of California, Irvine, CA, USA

fYear

2010

fDate

1-4 June 2010

Firstpage

447

Lastpage

450

Abstract

In this research, a fundamental study is conducted to identify the materials and processes for producing bonding/barrier composites on Bi₂Te₃ for high temperature thermoelectric applications. Pd, Ni, Ni/Au, Ag, and Ti/Au were deposited and evaluated using scanning electron microscope (SEM) and energy dispersive X-ray (EDX). A thermal evaporated, 100nm Ti/100nm Au composite gave the most promising.

Keywords

bismuth compounds; high-temperature electronics; scanning electron microscopy; thermoelectricity; Bi₂Te₃; barrier layer; bismuth telluride; bonding layer; bonding/barrier composites; energy dispersive X-ray; high temperature thermoelectric applications; scanning electron microscope; size 100 nm; Bismuth; Bonding; Composite materials; Conducting materials; Dispersion; Gold; Scanning electron microscopy; Tellurium; Temperature; Thermoelectricity; Ag-In; Bismuth telluride; Peltier effect; TLP; barrier structure; fluxless bonding; transient liquid phase bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th

Conference_Location

Las Vegas, NV

ISSN

0569-5503

Print_ISBN

978-1-4244-6410-4

Electronic_ISBN

0569-5503

Type

conf

DOI

10.1109/ECTC.2010.5490934

Filename

5490934